K4E160411D-F TOEPASSING,ROUTE,DE FUNCTIE
K4E160411D-F Datasheet PDF
| Fabrikant | Verpakkingsgroep | Beschrijving | Temperatuur | |
|---|---|---|---|---|
| Samsung | TSOP-II | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
K4E160411D-F PDF | Min°C | Max°C |
- Samsung semiconductor K4E160411D
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4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung K4E160411D-F
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4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.